Micro-Semiconductor SGT MOSFET supports the electronic design open source competition

Micro-Semiconductor SGT MOSFET supports the electronic design open source competition

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According to the latest news, the National Third Generation Semiconductor Technology Innovation Center (Nanjing) has successfully broken through the key technology of trench silicon carbide MOSFET chip manufacturing after four years of independent research and development, marking the first major breakthrough in my country in this field. In this innovation-driven era, as the co-organizer of the 9th LiChuang Electronic Design Open Source Competition, WINSOK has launched a new SGT process product.

SGT technology changes the form of the internal electric field of MOSFET, further transforming the traditional triangular electric field into a more compressed trapezoidal electric field, which can further reduce the thickness of the EPI layer, reduce the on-resistance, and reduce the thermal resistance. At present, WINSOK's new generation of low and medium voltage power MOSFETs widely use this technology, such as: WSD100N06GDN56, WSD40120DN56G, WSF15N10G, WSR170N04G, etc.

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Advantages of SGT process

Compared with ordinary trench MOSFET, SGT process MOSFET has lower switching loss, smaller junction capacitance, narrow Miller platform and low internal resistance. Specifically, the SGT process is 3-5 times deeper than the ordinary trench process. A polysilicon electrode, namely the shielding electrode or coupling electrode, is added under the gate electrode. The shielding electrode is connected to the source electrode, which realizes the function of shielding the gate and the drift region, reduces the Miller capacitance, and speeds up the switching speed of the device. At the same time, the charge coupling effect is realized, the critical electric field strength of the drift region is reduced, the on-resistance of the device is reduced, and the switching loss can be lower. Compared with ordinary trench MOSFETs, the internal resistance of SGT MOSFETs is more than 2 times lower.

MOSFETs use SGT technology to reduce the parasitic capacitance and on-resistance of field effect transistors, thereby improving chip performance and reducing chip area. Compared with ordinary trench MOSFETs, the chip area is reduced by more than 40% at the same power consumption. The unique device structure and mask layout design of SGT technology improve the durability of the product and reduce the chip area. Its unique process design reduces the number of process steps and masks, thereby reducing the production cost of MOSFETs, making MOSFET products extremely cost-effective and more competitive.

MOSFETs manufactured using SGT technology have a great advantage in power density compared to ordinary trench MOSFETs and planar MOSFETs. Since SGT MOSFETs have a deeper trench depth, more crystalline silicon volume can be used to absorb EAS energy, so SGT can perform better during avalanche and can better withstand avalanche breakdown and surge current.